发明名称 |
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY |
摘要 |
According to one embodiment, a magnetoresistive element includes a first magnetic layer with a perpendicular and variable magnetization, a second magnetic layer with a perpendicular and invariable magnetization, and a first nonmagnetic layer between the first and second magnetic layer. The first magnetic layer has a laminated structure of first and second ferromagnetic materials. A magnetization direction of the first magnetic layer is changed by a current which pass through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer. A perpendicular magnetic anisotropy of the second ferromagnetic material is smaller than that of the first ferromagnetic material. A film thickness of the first ferromagnetic material is thinner than that of the second ferromagnetic material. |
申请公布号 |
US2012163070(A1) |
申请公布日期 |
2012.06.28 |
申请号 |
US201213407039 |
申请日期 |
2012.02.28 |
申请人 |
NAGASE TOSHIHIKO;KAI TADASHI;NISHIYAMA KATSUYA;KITAGAWA EIJI;DAIBOU TADAOMI;NAKAYAMA MASAHIKO;NAGAMINE MAKOTO;FUKATSU SHIGETO;YOSHIKAWA MASATOSHI;YODA HIROAKI |
发明人 |
NAGASE TOSHIHIKO;KAI TADASHI;NISHIYAMA KATSUYA;KITAGAWA EIJI;DAIBOU TADAOMI;NAKAYAMA MASAHIKO;NAGAMINE MAKOTO;FUKATSU SHIGETO;YOSHIKAWA MASATOSHI;YODA HIROAKI |
分类号 |
G11C11/15;H01L29/82 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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