发明名称 |
Method of manufacturing semiconductor device and substrate processing apparatus |
摘要 |
There are provided a method of manufacturing a semiconductor device and a substrate processing apparatus by which the quality of a silicon nitride film can be improved. The method comprises: (a) supplying a silicon-containing gas into a process chamber accommodating a substrate in a heated state; (b) switching between an exhaust stop state and an exhaust operation state at least two times while a nitrogen-containing gas is supplied into the process chamber so as to vary an inside pressure of the process chamber such that a maximum inside pressure of the process chamber is at least twenty times higher than a minimum inside pressure of the process chamber. The steps (a) and (b) are alternately repeated to form a silicon nitride film on the substrate. |
申请公布号 |
US8168549(B2) |
申请公布日期 |
2012.05.01 |
申请号 |
US20100880287 |
申请日期 |
2010.09.13 |
申请人 |
ASAI MASAYUKI;HITACHI KOKUSAI ELECTRIC, INC. |
发明人 |
ASAI MASAYUKI |
分类号 |
H01L21/469 |
主分类号 |
H01L21/469 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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