发明名称 |
MASK AND METHOD TO PATTERN CHROMELESS PHASE LITHOGRAPHY CONTACT HOLE |
摘要 |
<p>A method of making a mask is disclosed. The method includes providing a first and a second mask layers and disposing a first phase shift region on the first mask layer. A second phase shift region is disposed on the second mask layer, wherein the first and second phase shift regions are out of phase. A continuous unit cell is formed in the first phase shift region. The unit cell comprises a center section and distinct extension sections. The extension sections are contiguous to and extend outwards from the center section. The distinct extension sections have a same width as the center section. The second phase shift region is adjacent to the unit cell in the first phase shift region. Fig. 8A</p> |
申请公布号 |
SG170768(A1) |
申请公布日期 |
2011.05.30 |
申请号 |
SG20110021193 |
申请日期 |
2005.11.07 |
申请人 |
GLOBALFOUNDRIES SINGAPORE PTE. LTD. |
发明人 |
KIM TAN SIA;YOENG TAN SOON;YING LIN QUN;MING CHONG HUEY;CHOO HSIA LIANG |
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