发明名称 SUBSTRATE PROCESSING APPARATUS
摘要 PURPOSE: A substrate processing device is provided to discharge non-reactive gas to the outside of a heater through a discharge hole by forming the discharge hole on an outer ring. CONSTITUTION: A chamber(10) includes a space for processing a substrate. A susceptor(20) is installed to be lifted on the space of the chamber. A gas supplier sprays process gas toward the substrate. A heater(40) heating the substrate is arranged on the lower side of the susceptor. A non-reactive gas supply unit(53) supplies non-reactive gas to the heater.
申请公布号 KR20110024549(A) 申请公布日期 2011.03.09
申请号 KR20090082588 申请日期 2009.09.02
申请人 ATTO CO., LTD. 发明人 HAHM, TAE HO;LEE, JUNG HWAN
分类号 H01L21/205 主分类号 H01L21/205
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