发明名称 |
SUBSTRATE PROCESSING APPARATUS |
摘要 |
PURPOSE: A substrate processing device is provided to discharge non-reactive gas to the outside of a heater through a discharge hole by forming the discharge hole on an outer ring. CONSTITUTION: A chamber(10) includes a space for processing a substrate. A susceptor(20) is installed to be lifted on the space of the chamber. A gas supplier sprays process gas toward the substrate. A heater(40) heating the substrate is arranged on the lower side of the susceptor. A non-reactive gas supply unit(53) supplies non-reactive gas to the heater.
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申请公布号 |
KR20110024549(A) |
申请公布日期 |
2011.03.09 |
申请号 |
KR20090082588 |
申请日期 |
2009.09.02 |
申请人 |
ATTO CO., LTD. |
发明人 |
HAHM, TAE HO;LEE, JUNG HWAN |
分类号 |
H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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