发明名称 Exposure mask, manufacturing method of electronic device, and checking method of exposure mask
摘要 According to the present invention, provided is a method of manufacturing a electronic device including forming a film over a substrate, performing a photoresist over the film, performing a first exposure by using an exposure mask which includes a scribe region and a inspection mark formed in a first side of the scribe region, and performing a second exposure so that a region that is exposed to the first side in the first exposure is exposed to a second side of the scribe region which is opposite to the first side, wherein, in the second exposure, an exposure light is incident on a region where the inspection mark is projected in the first exposure.
申请公布号 US7855035(B2) 申请公布日期 2010.12.21
申请号 US20070874431 申请日期 2007.10.18
申请人 FUJITSU SEMICONDUCTOR LIMITED 发明人 NAOE MITSUFUMI
分类号 G03F1/38;G03F1/44;G03F1/68;G03F1/84;G03F9/00;H01L21/027;H01L23/544 主分类号 G03F1/38
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