METHOD OF WRITING FOR RESISTANCE-CHANGE NON-VOLATILE MEMORY ELEMENT, AND RESISTANCE-CHANGE NON-VOLATILE MEMORY DEVICE

摘要

Disclosed is an optimal write method for a resistance-change element, wherein the operating window of a resistance-change element can be maximized. This write method is for resistance-change elements which shift reversibly between a high resistance state and a low resistance state according to the polarity of the applied voltage pulse, and includes a preparation step (S50), and write steps (S51, S51a, S51b). The preparation step (S50) applies to the resistance-change element a voltage pulse in which the voltage gradually becomes higher while measuring the resistance value of the resistance-change element so as to determine a first voltage (V1) at which the change to high resistance begins and a second voltage (V2) at which the resistance value becomes the maximum. The high resistance change step (S51a) applies to the resistance-change element a voltage pulse with a voltage (Vp) that is between the first voltage (V1) to the second voltage (V2) inclusive so as to shift the resistance-change element from the low resistance state (S52) to the high resistance state (S53).