| 摘要 |
<p>Provided is a method for producing a bonded substrate comprising a Si 1-x Ge x (0<x‰¤1) film in which a larger biaxial strain has been introduced than ever. Specifically, provided is a method for producing a bonded substrate comprising at least the steps of: providing a donor wafer and a handle wafer having a thermal expansion coefficient lower than the donor wafer, implanting ions of any one or both of hydrogen and a noble gas into the donor wafer to form an ion-implanted layer, performing a plasma activation treatment on at least one of bonding surfaces of the donor wafer and the handle wafer, bonding the donor wafer to the handle wafer, splitting the donor wafer through application of a mechanical impact to the ion-implanted layer, performing a surface treatment on a split surface of the donor wafer, and epitaxially growing a Si 1-x Ge x (0<x‰¤1) film on the split surface to thus form a strained Si 1-x Ge x (0<x‰¤1) film on the bonded wafers.</p> |
