NONVOLATILE MEMORY DEVICE, METHOD FOR PROGRAMMING THE NONVOLATILE MEMORY DEVICE, AND METHOD FOR READING THE NONVOLATILE MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile memory device which supplies a bit line sensing signal whose voltage level does not change sharply, i.e., to reduces a peak current of a bit line due to the bit line sensing signal. SOLUTION: The nonvolatile memory device includes a bit line sensing signal supply unit which outputs the bit line sensing signal whose voltage level is increased stepwise in accordance with a control signal, and a bit line sensing unit which selectively connects the bit line to a sensing node in accordance with the bit line sensing signal. COPYRIGHT: (C)2010,JPO&INPIT