BASE MATERIAL ETCHING MECHANISM, VACUUM PROCESS DEVICE AND BASE MATERIAL ETCHING METHOD

摘要

Disclosed is a base material etching mechanism for use in a vacuum process device which ionizes an introduced gas by discharging electrons into a vacuum chamber and etches and cleans a base material mounted on a turntable provided in the vacuum chamber. The base material etching mechanism comprises a pair of power introduction terminals for introducing power to a filament as an electron source, and a plurality of filaments connected in parallel between the pair of power introduction terminals. The plurality of filaments in the base material etching mechanism are arranged in the direction perpendicular to the direction of the axis of rotation of the turntable in a plane perpendicular to the direction of the axis of rotation. Also disclosed are a vacuum process device employing the etching mechanism and a base material etching method using the base material etching mechanism and the vacuum process device.