| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the performance of a semiconductor storage device with memory cells that enables multi-value records. Ž<P>SOLUTION: The semiconductor storage device has a plurality of memory cells mc1 disposed on a silicon substrate 1. Each memory cell mc1 has a selection element D1 and a plurality of memory elements RM1, RM2 and RM3 that are serially connected. Each of the memory cells RM1, RM2 and RM3 has a resistance change layer rv having a function to change a resistance value by Joule heat, and electrodes E1, E2 and E3 disposed on the upper surface and lower surface of the layer rv, respectively. As for each memory cell mc1, the resistance change layer rv that constitutes different memory elements RM1, RM2 and RM3 consists of the same material, while each of the electrodes E1, E2 and E3 that constitutes different memory elements RM1, RM2 and RM3 consists of different materials. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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