发明名称 CAPACITOR STRUCTURES
摘要 PURPOSE: Capacitor structures are provided to increase capacitance by forming a via hole in the same shape according to the shape of a conductive layer. CONSTITUTION: A first electrode(100) is composed of a plurality of conductive layers(ML1-ML4). Each layer comprises one or more openings. Each layer is connected in a vertical direction through a first via(V1-V3). A plurality of second electrodes(102) is made up of a plurality of layers. Each layer is connected in a vertical direction through a second via. A dielectric body(104) is formed between the first electrode and the second electrode. The first via is formed into the same shape as the first electrode. The second via is formed into the same shape as the second electrode.
申请公布号 KR20100065934(A) 申请公布日期 2010.06.17
申请号 KR20080124533 申请日期 2008.12.09
申请人 MAGNACHIP SEMICONDUCTOR, LTD. 发明人 RYU, YU SHIN
分类号 H01G4/005;H01G4/018 主分类号 H01G4/005
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