| 摘要 |
PROBLEM TO BE SOLVED: To provide a chemical mechanical polishing composition with which phase change alloy can be selectively removed, and a high removing speed and low dishing are obtained when a PRAM device is manufactured. SOLUTION: In a method for chemical mechanical polishing of a substrate including a germanium-antimony-tellurium chalcogenide phase change alloy, a chemical mechanical polishing composition is used including water, 1 to 40 wt.% colloidal silica abrasive particles having an average particle size of≤50 nm, and 0 to 5 wt.% quarternary ammonium compound, wherein the chemical mechanical polishing composition is oxidizer free and chelating agent free, and wherein the chemical mechanical polishing composition has a pH of >6 to 12. COPYRIGHT: (C)2010,JPO&INPIT |
