发明名称 Nonvolatile memory element, nonvolatile memory apparatus, and method of manufacture thereof
摘要 A lower electrode layer 2, an upper electrode layer 4 formed above the lower electrode layer 2, and a metal oxide thin film layer 3 formed between the lower electrode layer 2 and the upper electrode layer 4 are provided. The metal oxide thin film layer 3 includes a first region 3a whose value of resistance increases or decreases by an electric pulse that is applied between the lower electrode layer 2 and the upper electrode layer 4 and a second region 3b arranged around the first region 3a and having a larger content of oxygen than the first region 3a, wherein the lower and upper electrode layers 2 and 4 and at least a part of the first region 3a are arranged so as to overlap as viewed from the direction of the thickness of the first region 3a.
申请公布号 US7692178(B2) 申请公布日期 2010.04.06
申请号 US20070281034 申请日期 2007.03.06
申请人 PANASONIC CORPORATION 发明人 KAWASHIMA YOSHIO;TAKAGI TAKESHI;MIKAWA TAKUMI;WEI ZHIQIANG
分类号 H01L45/00 主分类号 H01L45/00
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