| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve correction efficiency and accuracy in a method for creating a pattern data for correcting a mask pattern. <P>SOLUTION: The method for creating a pattern data for creating a mask pattern data to be laid on a photomask includes: creating a test mask pattern having dimensions different from dimensions of a given mask pattern by moving positions of a plurality of edges in the given mask pattern in accordance with a predetermined probability density distribution; acquiring dimensions of a wafer pattern by exposing a wafer through a test mask on which the above test mask pattern is laid so as to form a wafer pattern on the wafer and measuring the dimensions of the wafer pattern; obtaining a relationship between the dimensions of the wafer pattern and the dimensions of the test pattern; and creating a mask pattern having dimensions that give a wafer pattern having predetermined dimensions by using the relationship. <P>COPYRIGHT: (C)2010,JPO&INPIT |
