AN INGOT DIAMETER CONTROLLING APPARATUS USING IN A SINGLE CRYSTALLINE SILICON INGOT AND SINGLE CRYSTAL INGOT GROWING METHOD

摘要

An ingot diameter controlling apparatus and an ingot growing method are provided to produce the diameter of the ingot accurately by compensating the diameter or changing the sensing region of a sensor according to a melt gap. A sensor unit(610) senses the property of the meniscus which is the contact surface of a growing ingot(670) and a silicon solution(660) of a quartz furnace(650). A compensation unit produces a diameter compensation value to compensate the diameter of the ingot according to the change of the melt gap. A diameter producing unit(620) produces the diameter of the ingot through the compensation value of the diameter by the compensation unit and the property of the meniscus sensed by the sensor unit. A controller(640) controls the diameter of the ingot based on the diameter of the ingot produced through the diameter producing unit.