| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing an epitaxial wafer capable of preventing the occurrence of a laminate failure even when a region of embedded impurities in a high concentration is formed. SOLUTION: The method of manufacturing an epitaxial wafer is characterized by having a step of forming impurities regions 18, 22 on a part of a silicon wafer 10, a step of cleaning the silicon wafer 10 with a DHF/HNO<SB>3</SB>solution, and a step of forming a silicon layer 24 on the silicon wafer 10 by an epitaxial growth. COPYRIGHT: (C)2009,JPO&INPIT
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