| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a microlithographic projection exposure device capable of minimizing undesirable changes in the intensity distribution produced on a wafer surface, based on the polarization distribution set in an illumination system. <P>SOLUTION: This microlithographic projection exposure device includes the illumination system 10 and a projection object lens 20. In operating the projection exposure device, the illumination system 10 illuminates an object plane of the projection object lens 20, and the projection object lens 20 forms an image of the object plane on an image plane. According to one embodiment, although polarization-dependent transmission is generated in the illumination system 10, and a nonuniform intensity distribution is provided on the object plane, with respect to at least one polarization distribution related to light incident on the object plane, the nonuniform intensity distribution brings about a uniform intensity distribution on the image plane, due to a polarization-dependent transmission characteristics of the projection object lens 20. <P>COPYRIGHT: (C)2009,JPO&INPIT |
