| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist laminate suitable for use in lithography using a low accelerated electron beam and to provide a pattern forming method. <P>SOLUTION: The resist laminate is obtained by sequentially stacking on a substrate a dry-etchable lower-layer organic film, an intermediate layer and an upper-layer resist film, wherein the upper-layer resist film is formed of a positive resist composition for a low accelerated electron beam containing a resin component (A) having an acid-dissociable dissolution inhibiting group and alkali solubility increased by the action of an acid and an acid generator component (B) which generates an acid upon exposure, and a residual film rate of the upper-layer resist film is ≥80%. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
