METHOD OF MANUFACTURING PHASE- CHANGEABLE MEMORY DEVICE

摘要

A method of manufacturing a phase change memory device is provided to prevent an interface of a phase change material film pattern from being contaminated by forming first and second capping films on the phase change material film pattern. An insulation film pattern(130) having an opening is formed on a substrate(100). Lower electrodes(140) for burying the opening are formed. A phase change material film pattern(150) and an upper electrode film pattern(160), which is connected to the lower electrodes, are laminated in a structure. A first capping film(190) is formed along a surface of the insulation film pattern of the structure. A second capping film(200) covers the first capping film, such that a void is generated between the structures.