| 摘要 |
A method for manufacturing a semiconductor device is provided to prevent the fluctuation of a step gate profile by forming a stepped profile to have a slope of a desired angle. By etching a semiconductor substrate(10), a stepped profile having a sidewall slope is formed in the substrate. At this time, the sidewall slope of the stepped profile is 80~90 angle. A gate polysilicon layer, a gate metal film and a gate hard mask are sequentially stacked on the resultant structure. A plurality of gate patterns(55) are formed to overlap the stepped profile by etching the stacked structure.
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