| 摘要 |
A semiconductor device and a manufacturing method thereof are provided to form an integrated device efficiently by connecting the individual devices in an SbI(System by Interconnection) way. An integrated device comprises a first device, a second device and a connection electrode. A first pad is formed on the uppermost metal layer of the first device(31). A second pad is disposed around the first device, and formed on the uppermost metal layer of the second device(33). The connection electrode(25) connects the first pad and the second pad electrically. A bonding pad for signal connection is connected to the integrated device.
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