摘要 |
<p>A method of fabricating a flash memory device is provided to carry out a gap filling process of an oxide layer by forming spacers of different thickness on a transistor region. A first insulating layer(210) and a second layer(220) are formed on a flash cell and a transistor of a substrate(200). After a photoresist layer(230) is applied on the second insulating layer, the photoresist layer is removed from a flash cell region to open the flash cell region. The second insulating layer is removed from the flash cell region, and then the second insulating layer over the flash cell region is etched to form a dual spacer on both sidewalls of the transistor. The first insulating layer left in the flash cell region is etched to form a spacer on both sidewalls of the flash cell.</p> |