METHOD OF MANUFACTURING THIN FILM TRANSISTOR SUBSTRATE

摘要

A method for manufacturing a thin film transistor substrate is provided to improve the characteristic of the substrate by reducing a line width of a semiconductor layer protruded laterally from a data line. An insulating layer(120), a semiconductor layer(130), a source metal layer(140) and a photoresist layer are sequentially deposited on a substrate(100) with a gate line and a gate electrode. An exposure region of the photoresist region and a partial exposure region are developed, and then the exposed source metal layer is etched to form a data line. A portion of the data line protruded laterally from the data line is removed through a photolithography process, and then the exposed semiconductor layer is etched. The photoresist layer remaining on the partial exposure region is removed through primary stripping, and then the exposed source metal layer is etched to form a source electrode and a drain electrode. A portion of the semiconductor layer exposed between the source electrode and the drain electrode is etched. The photoresist layer is fully removed from the substrate.