| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist underlay film forming composition for a resist underlay film for lithography, to provide a method for forming a resist underlay film for lithography using the above resist underlay film forming composition, and to provide a method for forming a photoresist pattern. <P>SOLUTION: The resist underlay film forming composition for lithographic processes in the manufacture of a semiconductor device contains a resin having a sulfone coupling. The resin has a sulfone coupling introduced into the main chain or a side chain connected to the main chain. The method for manufacturing a semiconductor device includes a step of forming a resist underlay film by applying the resist underlay film forming composition on a semiconductor substrate and baking at 50 to 300°C. An integrated circuit element is formed by applying and baking the resist underlay film forming composition on a semiconductor substrate to form a resist underlay film, coating the resist underlay film with a photoresist, exposing and developing the substrate coated with the resist underlay film and the photoresist, and performing dry etching to transfer an image onto the substrate. <P>COPYRIGHT: (C)2008,JPO&INPIT |
