ATOMIC LAYER DEPOSITION PROCESS USING REACTIVE ION AND APPARATUS FOR PERFORMING THE SAME

摘要

An atomic layer deposition process using reactive ions and an apparatus for performing the same are provided to form a pure metal thin film by removing effectively a ligand from a metallic precursor absorbed in a substrate. A substrate(50) is loaded into a reaction chamber(10). A metallic precursor gas and a reaction gas are implanted into the reaction chamber. The first plasma is generated at a position near to the substrate in the comparison with a shower head(20) within the reaction chamber. A physical decomposition process is performed to promote a reaction for removing a ligand from a metallic precursor absorbed in the substrate by using physical energy of reactive ions included in the first plasma by applying RF power to the substrate. The second plasma is generated at a position near to the shower head in the comparison with the substrate within the reaction chamber. A chemical process is performed to execute a reaction for removing the ligand from the metallic precursor absorbed in the substrate by using radicals included in the second plasma.