| 摘要 |
PROBLEM TO BE SOLVED: To prevent Cu wiring on a via-bottom from being dissolved in cleaning after via working and wiring groove working when forming dual damascene metal wiring. SOLUTION: An etch stopper film 2 is formed on wiring 1 formed on a substrate, and an insulating film 3 is formed on the etch stopper film. An opening 5 which reaches the etch stopper film is then formed on the insulating film by etching using a first mask 4. A pinhole 6 generated in an area exposed in the opening on the etch stopper film is filled with a deposit 7, and the opening where the pinhole is exposed by filling with the deposit, is then cleaned using a cleaning liquid. A wiring groove 11 is then formed by etching using a second mask 10, and the opening which reaches the wiring groove and the etch stopper film, is cleaned using a cleaning liquid. The area exposed to the opening on the etch stopper film is then removed by etching together with the pinhole filled with the deposit, and wiring is exposed. COPYRIGHT: (C)2008,JPO&INPIT
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