| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a uniform phosphorus-doped conductive silicon film on a substrate under normal pressure by a coating method and provide a method for producing a higher order silane compound containing phosphorus atom for the film-forming method. SOLUTION: The method for forming a higher order silane compound containing phosphorus atom comprises the irradiation of a solution containing a photopolymerizable silane compound and a phosphorus compound with light having wavelength of >400 nm. The method for forming a phosphorus-containing silicon film comprises the coating of a substrate with a solution containing the higher order silane compound containing phosphorus atom obtained by the above method and the heat-treatment of the coated substrate. COPYRIGHT: (C)2008,JPO&INPIT
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