发明名称 High-voltage tolerant power rail electrostatic discharge clamp circuit
摘要 A high-voltage tolerant power-rail ESD clamp circuit is proposed, in which circuit devices can safely operate under the high power supply voltage that is three times larger than their process limitation without gate-oxide reliability issue. Moreover, an ESD detection circuit is used to effectively improve the whole ESD protection function by substrate-triggered technique. Because only low voltage (1*VDD) devices are used to achieve the object of high voltage (3*VDD) tolerance, the proposed design provides a cost effective power-rail ESD protection solution to chips with mixed-voltage interfaces.
申请公布号 US7283342(B1) 申请公布日期 2007.10.16
申请号 US20060428571 申请日期 2006.07.05
申请人 NATIONAL CHIAO TUNG UNIVERSITY 发明人 KER MING-DOU;CHEN WEN-YI
分类号 H02H9/00;H02H3/20;H02H3/22 主分类号 H02H9/00
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