| 摘要 |
PROBLEM TO BE SOLVED: To provide a flash memory element for reducing an interference effect, and to provide a method of manufacturing the flash memory element. SOLUTION: There is provided the flash memory element including: a semiconductor substrate having an active region defined by element isolation films which are unidirectionally arranged; a control gate line which is arranged in the perpendicular direction to the element isolation films; floating gates which are formed on an active region at a lower portion of the control gate line; and an island polysilicon line which is formed in the shape of a line along an arrangement direction of the element isolation film in the element isolation film, wherein a voltage is impressed so as to be able to prevent an interference between the floating gates which adjoin each other through the element isolation films. COPYRIGHT: (C)2007,JPO&INPIT
|
