FABRICATION OF SEMICONDUCTOR DEVICES FOR LIGHT EMISSION
摘要
<p>A semiconductor device for light emission having a plurality of epitaxial layers with an n-type layer for light emission and a p-type layer for light reflection. The p-type layer has at least one seed layer for an outer layer of a conductive metal. The at least at least one seed layer is a material for providing a buffer for differential thermal expansion of the outer layer and the light reflecting layer.</p>
申请公布号
WO2007037762(A1)
申请公布日期
2007.04.05
申请号
WO2006SG00254
申请日期
2006.09.01
申请人
TINGGI TECHNOLOGIES PRIVATE LIMITED;YUAN, SHU;KANG, XUE JUN;WU, DA KE