| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device formed with of a DRAM of a high integration degree which possesses excellent transistor characteristics. <P>SOLUTION: The semiconductor device comprises a trench formed in a semiconductor substrate 1, a capacitor insulating film formed in the lower side of the inner wall of the trench, a trench capacitor having a color insulating film 9 formed in the upper side of the inner wall of the trench and a storage electrode 10 embedded in the trench, a MOS transistor formed in the semiconductor substrate, and a silicide film 16 for connection between either source or drain diffusion region 18 of the MOS transistor and the storage electrode of the trench capacitor. In this case, a color insulating film 9 has a conductive film 20 in the upper part. The conductive film 20 is isolated from the semiconductor substrate, the storage electrode, and the color insulating film by an isolation insulating film 19. <P>COPYRIGHT: (C)2007,JPO&INPIT |
