发明名称 |
Method for making a semiconductor device having a high-k gate dielectric |
摘要 |
A method for making a semiconductor device is described. That method includes forming on a substrate a dielectric layer that has a dielectric constant that is greater than the dielectric constant of silicon dioxide. The dielectric layer is modified so that it will be compatible with a gate electrode to be formed on the dielectric layer, and then a gate electrode is formed on the dielectric layer.
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申请公布号 |
US7166505(B2) |
申请公布日期 |
2007.01.23 |
申请号 |
US20040943661 |
申请日期 |
2004.09.16 |
申请人 |
INTEL CORPORATION |
发明人 |
CHAU ROBERT;ARGHAVANI REZA;DOCZY MARK |
分类号 |
H01L21/8242;H01L21/28;H01L21/316;H01L21/335;H01L21/8232;H01L29/51 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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