发明名称 |
High voltage generators having an integrated discharge path for use in non-volatile semiconductor memory devices |
摘要 |
High voltage generators include a charge pump and a ripple reduction circuit that includes an integrated discharge path. The ripple reduction circuit limits the voltage level from a charge pump when the charge pump is in a first operating mode and provides a discharge path that from the output terminal of the ripple reduction circuit to the output of the charge pump when the charge pump is in a second operating mode. Semiconductor memories incorporating such high voltage generators are also provided. Coupling circuits having an integrated discharge path are also provided.
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申请公布号 |
US7151702(B2) |
申请公布日期 |
2006.12.19 |
申请号 |
US20040915294 |
申请日期 |
2004.08.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HAN WOOK-GHEE;BYEON DAE-SEOK;LEE SUNG-SOO;LIM YOUNG-HO |
分类号 |
G11C5/14;G11C11/34;G11C16/04;G11C16/12;G11C16/30 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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