发明名称 High voltage generators having an integrated discharge path for use in non-volatile semiconductor memory devices
摘要 High voltage generators include a charge pump and a ripple reduction circuit that includes an integrated discharge path. The ripple reduction circuit limits the voltage level from a charge pump when the charge pump is in a first operating mode and provides a discharge path that from the output terminal of the ripple reduction circuit to the output of the charge pump when the charge pump is in a second operating mode. Semiconductor memories incorporating such high voltage generators are also provided. Coupling circuits having an integrated discharge path are also provided.
申请公布号 US7151702(B2) 申请公布日期 2006.12.19
申请号 US20040915294 申请日期 2004.08.10
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HAN WOOK-GHEE;BYEON DAE-SEOK;LEE SUNG-SOO;LIM YOUNG-HO
分类号 G11C5/14;G11C11/34;G11C16/04;G11C16/12;G11C16/30 主分类号 G11C5/14
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