| 摘要 |
A sidewall gate thin-film transistor (TFT) and associated fabrication method are provided. The method provides a substrate with a surface and forms a surface-normal feature. The surface-normal feature is normal with respect to the substrate surface, with a sidewall made from an electrical insulator. An active silicon (Si) layer is formed overlying the surface-normal feature, with a channel overlying the surface-normal feature sidewall. A gate insulator overlies the channel, and a sidewall gate overlies the gate insulator. More specifically, the gate insulator is formed from conformally depositing an electrical insulator layer overlying the active Si layer. The gate electrode layer is conformally deposited overlying the gate insulator layer and anisotropically etched, leaving a gate electrode sidewall adjacent to the gate insulator layer overlying the channel.
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