| 摘要 |
A method for fabricating a semiconductor device having a recess gate is provided to improve refresh characteristic while increasing a channel length by forming a recess pattern without a horn in a recess gate process. A predetermined region of a semiconductor substrate(21) is etched to form an isolation trench(24) by using DPS(decoupled plasma source) equipment wherein the etch section of the trench has a negative type. A wall oxidation process is performed on the surface of the isolation trench to change the negative type of the isolation trench into a vertical type. An isolation layer is filled in the isolation trench. An active region defined by the isolation layer is etched by a predetermined depth to form a recess pattern. A gate insulation layer is formed on the resultant structure. A recess gate is formed on the gate insulation layer wherein the lower part of the recess gate is buried in the recess pattern and the upper part of the recess gate protrudes from the surface of the semiconductor substrate.
|
