发明名称 RADIATION SCANNING ARM AND COLLIMATOR FOR SERIES-PROCESSING SEMICONDUCTOR WAFER WITH RIBBON BEAM
摘要 PROBLEM TO BE SOLVED: To provide a hybrid scan type ion implantation device processing a single wafer, capable of uniformly injecting and having a simple structure, excellent durability and reliability. SOLUTION: A wafer is mounted on a wafer holder 120 attached to an end of an arm 110 connected with a first pivot 150 and bent midway by a second pivot 140. The wafer is tilted by an arbitrary angle with the second pivot and mechanically scanned in a circular arc shape by the first pivot. A ribbon beam 20 whose current density is proportional to the distance from the first pivot is formed with a collimator to irradiate the wafer to achieve uniform injection. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006278316(A) 申请公布日期 2006.10.12
申请号 JP20060025000 申请日期 2006.02.01
申请人 ADVANCED ION BEAM TECHNOLOGY INC 发明人 KAIM ROBERT E;WHITE NICHOLAS R
分类号 H01J37/317;C23C14/48;H01L21/265 主分类号 H01J37/317
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