| 摘要 |
PROBLEM TO BE SOLVED: To provide a vertical resonator type surface luminous semiconductor laser device permitting high-speed modulation of more than 10 Gbps by modulating lateral mode electrically. SOLUTION: The vertical resonator type surface luminous semiconductor laser device is equipped on a substrate 101 with a lower multilayer film reflection mirror 102, a resonator comprising an active layer 104, and an upper multilayer film reflecting mirror 108. A light absorbing layer 109 is transparent with respect to light from the active layer 104 when an electric field is not impressed, but absorbes the light from the active layer 104 when the electric field is impressed. The layer 109 is provided in a periphery surrounding a non-absorption region transparent with respect to the light from the active layer 104, while the switching operation of the lateral mode of laser oscillation between a fundamental mode and a high dimensional mode is effected by modulating an electric field impressed on the light absorbing layer 109. COPYRIGHT: (C)2006,JPO&NCIPI
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