| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for quantitating metal to lower density as compared with before by simple operation for polishing slurry since the polishing slurry may be subjected to metal contamination by contact with a metal when using the polishing slurry, the contaminated polishing slurry enters a semiconductor wafer during polishing, and hence the characteristics of a substrate are damaged. SOLUTION: The method for quantitating molten metal in the semiconductor polishing slurry includes a pH adjustment process for setting pH in the semiconductor polishing slurry to 1 or smaller before setting the pH to 2-9, a chelate carrier contact process for allowing the pH-adjusted semiconductor polishing slurry to come into contact with a chelate carrier, an acid extracting process for bringing an acid aqueous solution into contact with the chelate carrier brought into contact with the semiconductor polishing slurry, and a metal determination process for quantitating metal in an extracting liquid of acid obtained by the acid extracting process. When entire metal is quantitated, a hydrofluoric acid treatment process, where hydrofluoric acid is added to the semiconductor polishing slurry for treatment at 50-300°C, is performed before performing each process. COPYRIGHT: (C)2006,JPO&NCIPI
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