| 摘要 |
PROBLEM TO BE SOLVED: To enhance super junction effect of a semiconductor device having a super junction structure while preventing deterioration in breakdown voltage. SOLUTION: The semiconductor device 100 has an element forming region in which a gate electrode 108 is formed, and an outer circumferential region formed on the outer circumference of the element forming region and in which an isolation region 118 is formed. On the major surface of a semiconductor substrate 101, a parallel pn layer is formed by arranging an N type drift region 104 and a P type column region 106 alternately. Although a field electrode 120 is formed on the N type drift region 104 in the outer circumferential region, the field electrode 120 is not formed on the P type column region 106. The P type column region 106 in the outer circumferential region is formed deeper than the P type column region 106 in the element forming region. COPYRIGHT: (C)2006,JPO&NCIPI
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