| 摘要 |
<p>PROBLEM TO BE SOLVED: To accurately activate a sense amplifier. SOLUTION: This semiconductor memory is provided with a plurality of memory cell 1 connected to bit lines L3 and section word lines L2, a plurality of sense amplifiers 2 connected respectively to one end of each bit line L3, word line selecting circuits 3 selecting section word lines L2, dummy bit lines L4 arranged in almost parallel to the bit lines L3, a plurality of dummy cells 4 connected between dummy bit lines L4, and dummy bit line sense amplifiers 5 connected to one end of dummy bit lines L4. As at least, two dummy cells 4 out of a plurality of dummy cells 4 are selected simultaneously when a main row address signal is made a low level, an input current flowing into the dummy bit line sense amplifier 5 can be increased more than conventional one, the dummy bit line sense amplifier 5 is operated at high speed, and activation timing of the sense amplifier 2 is made fast.</p> |
