| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a memory device which can reduce manufacturing costs. <P>SOLUTION: The memory device includes a plurality of transistors 510, 515, 520, 525, 530, 535, 540, and 545, each of which is composed of at least a part of one of a plurality of doped areas formed on a board and at least a part of one of a plurality of first conductors each of which is included in a first metal layer and extends over across one of the doped areas. The memory device also comprises a second metal layer which includes a plurality of second conductors each connected to some of the transistors 510 to 545, a third metal layer which includes a plurality of bit lines 560, 565 each connected to some of the transistors 510 to 545, and a fourth metal layer which includes a plurality of word lines 580, 585 each connected to some of the transistors 510 to 545. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
