| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric memory device that has less damage or deterioration in data. SOLUTION: The ferroelectric memory device has bit and plate lines. The device is provided with: a plate line drive means for driving the plate line; a plate line ground wiring connected to the plate line by the plate line drive means; a bit line ground wiring for grounding the bit line; and a short-circuiting means for short-circuiting the plate line ground wiring and the bit line ground wiring. In this case, preferably, the short-circuiting means is a transistor, where one of a source and a drain is electrically connected to the plate line ground wiring and the other is electrically connected to the bit line ground wiring. COPYRIGHT: (C)2005,JPO&NCIPI
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