发明名称 |
Methods of manufacturing integrated circuit devices having contact holes using multiple insulating layers |
摘要 |
The present invention provides methods of forming contact holes and integrated circuit devices having the same. A conductive plug is formed on a substrate. A first insulating layer is formed on the conductive plug and a second insulating layer is formed on the first insulating layer. The second insulating layer is etched to expose at least a portion of the first insulating layer and the first insulating layer is etched to expose at least a portion of the conductive plug. |
申请公布号 |
US6897109(B2) |
申请公布日期 |
2005.05.24 |
申请号 |
US20040864277 |
申请日期 |
2004.06.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JIN BEOM-JUN;KIM YOUNG-PIL |
分类号 |
H01L21/28;H01L21/02;H01L21/60;H01L21/768;H01L21/8242;H01L27/108;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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