| 摘要 |
PROBLEM TO BE SOLVED: To provide a washing method by which the facial roughening of an SiGe layer caused on washing a stacked substrate having the SiGe layer as the outermost surface layer is prevented, and to provide a sticking method. SOLUTION: In the method for washing a stacked substrate having an SiGe layer at least as the outermost surface layer, a protective film is formed on the surface of the SiGe layer, and then the stacked substrate is washed so that the protective film remains with a first washing liquid capable of etching the protective film. In another embodiment of the method for washing a stacked substrate, the protective film of the stacked substrate which has been subjected to the washing is removed with a second washing liquid capable of etching the protective film and in which an etching rate of the protective film is smaller than that of the first washing liquid, and the stacked substrate is washed so as to expose the SiGe layer. In the sticking method for a substrate, the outermost surface layer of the stacked substrate subjected to the washing using the washing method and the surface of another substrate are stuck directly or via an insulating film. COPYRIGHT: (C)2005,JPO&NCIPI
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