ARRAY SUBSTRATE OF THIN FILM TRANSISTOR FORMING AT LEAST ONE PROTRUSION ON GATE LINE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: An array substrate of thin film transistor and a method for manufacturing the same are provided to prevent an exposure of a semiconductor pattern from a backlight by forming at least one protrusion in a gate line. CONSTITUTION: A gate electrode of a thin film transistor comprises a gate line(102). A data line(104) crosses the gate line and a gate dielectric. A source electrode(110) is connected with the data line. A drain electrode(112) faces to the source electrode. A semiconductor layer forms a channel between the source electrode and the drain electrode. A pixel(118) electrode is connected with the drain electrode through a contact hole of a protective layer.