发明名称 |
Solid-state imaging device and manufacturing method thereof |
摘要 |
The solid-state imaging device according to the present invention comprises: a plurality of light-sensitive elements 1 arranged in a matrix form at regular spacings in a photoreceiving region provided on a semiconductor substrate; a plurality of detecting electrodes provided on the semiconductor substrate corresponding to the plurality of the light-sensitive elements for detecting an electrical charge generated by each light-sensitive element; a light-shielding film 58 coating the plurality of detecting electrodes and having an aperture 65 over each light-sensitive element; and a plurality of reflecting walls 62, which are formed in a grid pattern over the light-shielding film so as to partition the apertures individually over the respective light-sensitive elements, for reflecting a portion of light entering the semiconductor substrate from above onto the aperture on each light-sensitive element. The plurality of reflecting walls are formed so that a middle point of the reflecting walls opposing each other across the aperture is displaced from a center of the aperture toward a center of the photoreceiving region.
|
申请公布号 |
US2005045928(A1) |
申请公布日期 |
2005.03.03 |
申请号 |
US20040891103 |
申请日期 |
2004.07.15 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
KURIYAMA TOSHIHIRO |
分类号 |
H01L27/14;H01L21/00;H01L27/146;H01L27/148;H01L31/02;H01L31/0216;H01L31/0232;H01L31/062;H04N5/225;H04N5/335;H04N5/365;H04N5/369;H04N5/372;(IPC1-7):H01L21/00 |
主分类号 |
H01L27/14 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|