| 摘要 |
An apparatus for processing a substrate including a processing chamber having an upper space into which a gas for processing a substrate is introduced and a lower space for exhausting processing plasma used in a process for processing the substrate and a byproduct generated in the process. An upper electrode is disposed in the upper space. The upper electrode changes the processing gas into the processing plasma, and also changes a cleaning gas into cleaning plasma for cleaning a first surface that defines the upper space. The substrate is disposed on a lower electrode. The lower electrode has an upper face defining the upper space. An auxiliary electrode is disposed in the lower space. The auxiliary electrode forms the cleaning plasma in the lower space to clean a second surface defining the lower space.
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