| 摘要 |
<p>PURPOSE: A method for fabricating a magnetic memory device is provided to decrease the number of processes by selectively forming a soft magnetic material layer and by eliminating the necessity of a lithography technique, an etching technique, etc. CONSTITUTION: The first interconnection is formed. A magnetoresistance effect memory device(13) includes a tunnel insulation layer formed between a ferromagnetic material and the magnetoresistance effect memory device, electrically insulated from the first interconnection. The memory device is coated with an insulation layer. The second interconnection is formed to be buried in the insulation layer, electrically connected to the memory device. The second interconnection spatially crosses the first interconnection through the memory device disposed between the first and second interconnections. The insulation layer on the side part of the second interconnection is eliminated to expose the second interconnection. A soft magnetic material layer is selectively formed only on the surface of the second interconnection.</p> |
