| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to prevent bridges and voids by increasing uniformly the CD(Critical Dimension) of major and minor axes of an active region. CONSTITUTION: A nitride layer(120), an organic BARC(Bottom Anti-Reflective Coating) layer(140a) and a photoresist pattern(160) are sequentially formed on a substrate(100). The organic BARC layer is selectively etched, wherein a polymer spacer(180) is formed at both sidewalls of the BARC and the photoresist pattern. A trench is formed by etching the substrate using the polymer spacer and the photoresist pattern as a mask. The polymer spacer, the photoresist pattern and the organic BARC layer are removed. Then, an isolation layer is formed in the trench.
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