发明名称 Method for aligning a contact or a line to adjacent phase-shifter on a mask
摘要 A method for fabricating a mask which includes a printable contact and/or line area which is aligned with a phase-shifter. The method includes preparing a mask-in-process comprising a substrate underlying a first layer, an opaque layer overlying the first layer, and a first resist material overlying the opaque layer, and subjecting the mask-in-process to a plurality of exposures and at least one etching to create a phase-shifter and to open a printable contact and/or line area surrounded by a second resist material, wherein the printable contact and/or line area is aligned with the phase-shifter.
申请公布号 US6737200(B2) 申请公布日期 2004.05.18
申请号 US20010770385 申请日期 2001.01.29
申请人 MICRON TECHNOLOGY, INC. 发明人 DULMAN H. DANIEL;STANTON WILLIAM A.
分类号 G03F1/00;G03F7/00;G03F7/20;(IPC1-7):G03F9/00;G03F5/00;G03C5/00 主分类号 G03F1/00
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